ipb100n04s4-h2 ipi100n04s4-h2, ipp100n04s4-h2 optimos ? -t2 power-transistor features ? n-channel - enhancement mode ? aec qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? green product (rohs compliant) ? 100% avalanche tested maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current 1) i d t c =25c, v gs =10v 100 a t c =100c, v gs =10v 2) 100 pulsed drain current 2) i d,pulse t c =25c 400 avalanche energy, single pulse 2) e as i d =50a 280 mj avalanche current, single pulse i as - 100 a gate source voltage v gs - 20 v power dissipation p tot t c =25c 115 w operating and storage temperature t j , t stg - -55 ... +175 c iec climatic category; din iec 68-1 - - 55/175/56 value v ds 40 v r ds(on),max (smd version) 2.4 m w i d 100 a product summary pg-to220-3-1 pg-to262-3-1 pg-to263-3-2 type package marking ipb100n04s4-h2 pg-to263-3-2 4n04h2 ipi100n04s4-h2 pg-to262-3-1 4n04h2 ipp100n04s4-h2 pg-to220-3-1 4n04h2 rev. 1.0 page 1 2012-07-02
ipb100n04s4-h2 ipi100n04s4-h2, ipp100n04s4-h2 parameter symbol conditions unit min. typ. max. thermal characteristics 2) thermal resistance, junction - case r thjc - - - 1.3 k/w thermal resistance, junction - ambient, leaded r thja - - - 62 smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 3) - - 40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0v, i d = 1ma 40 - - v gate threshold voltage v gs(th) v ds = v gs , i d =70a 2.0 3.0 4.0 zero gate voltage drain current i dss v ds =40v, v gs =0v - 0.03 1 a v ds =18v, v gs =0v, t j =85c 2) - 1 20 gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =100a - 2.4 2.7 m w v gs =10v, i d =100a, smd version - 2.1 2.4 values rev. 1.0 page 2 2012-07-02
ipb100n04s4-h2 ipi100n04s4-h2, ipp100n04s4-h2 parameter symbol conditions unit min. typ. max. dynamic characteristics 2) input capacitance c iss - 5520 7180 pf output capacitance c oss - 1250 1750 reverse transfer capacitance c rss - 42 97 turn-on delay time t d(on) - 18 - ns rise time t r - 13 - turn-off delay time t d(off) - 19 - fall time t f - 21 - gate charge characteristics 2) gate to source charge q gs - 32 42 nc gate to drain charge q gd - 10 23 gate charge total q g - 70 90 gate plateau voltage v plateau - 5.5 - v reverse diode diode continous forward current 2) i s - - 100 a diode pulse current 2) i s,pulse - - 400 diode forward voltage v sd v gs =0v, i f =100a, t j =25c - 0.9 1.3 v reverse recovery time 2) t rr v r =20v, i f =50a, d i f /d t =100a/s - 48 - ns reverse recovery charge 2) q rr - 54 - nc 2) defined by design. not subject to production test. 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 1) current is limited by bondwire; with an r thjc = 1.3k/w the chip is able to carry 172a at 25c. t c =25c values v gs =0v, v ds =25v, f =1mhz v dd =20v, v gs =10v, i d =100a, r g =3.5 w v dd =32v, i d =100a, v gs =0 to 10v rev. 1.0 page 3 2012-07-02
ipb100n04s4-h2 ipi100n04s4-h2, ipp100n04s4-h2 1 power dissipation 2 drain current p tot = f( t c ); v gs 6 v i d = f( t c ); v gs 6 v ; s m d 3 safe operating area 4 max. transient thermal impedance i d = f( v ds ); t c = 25 c; d = 0; smd z thjc = f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 1 10 100 1000 0.1 1 10 100 v ds [v] i d [ a ] single pulse 0.01 0.05 0.1 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 1 10 0 10 -1 10 -2 10 -3 t p [s] z t h j c [ k / w ] 0 25 50 75 100 125 0 50 100 150 200 t c [c] p t o t [ w ] 0 20 40 60 80 100 120 0 50 100 150 200 t c [c] i d [ a ] rev. 1.0 page 4 2012-07-02
ipb100n04s4-h2 ipi100n04s4-h2, ipp100n04s4-h2 5 typ. output characteristics 6 typ. drain-source on-state resistance i d = f( v ds ); t j = 25 c; smd r ds(on) = f( i d ); t j = 25 c; smd parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. drain-source on-state resistance i d = f( v gs ); v ds = 6v r ds(on) = f( t j ); i d = 100 a; v gs = 10 v; smd parameter: t j 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] r d s ( o n ) [ m w ] 5.5 v 6 v 6.5 v 7 v 10 v 0 50 100 150 200 250 300 350 400 0 1 2 3 4 v ds [v] i d [ a ] 5.5 v 6 v 6.5 v 7 v 10 v 1 3 5 7 9 0 100 200 300 i d [a] r d s ( o n ) [ m w ] -55 c 25 c 175 c 0 50 100 150 200 250 300 350 400 3 4 5 6 7 v gs [v] i d [ a ] rev. 1.0 page 5 2012-07-02
ipb100n04s4-h2 ipi100n04s4-h2, ipp100n04s4-h2 9 typ. gate threshold voltage 10 typ. capacitances v gs(th) = f( t j ); v gs = v ds c = f( v ds ); v gs = 0 v; f = 1 mhz parameter: i d 11 typical forward diode characteristicis 12 avalanche characteristics if = f(v sd ) i a s = f( t av ) parameter: t j parameter: t j(start) 25 c 175 c 10 3 10 2 10 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd [v] i f [ a ] 70 a 350 a 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v g s ( t h ) [ v ] ciss coss crss 10 2 10 3 10 4 0 5 10 15 20 25 30 v ds [v] c [ p f ] 10 1 25 c 100 c 150 c 1 10 100 1000 1 10 100 1000 t av [s] i a v [ a ] 25 c 175 c 10 3 10 2 10 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd [v] i f [ a ] rev. 1.0 page 6 2012-07-02
ipb100n04s4-h2 ipi100n04s4-h2, ipp100n04s4-h2 13 avalanche energy 14 drain-source breakdown voltage e as = f( t j ) v br(dss) = f( t j ); i d = 1 ma parameter: i d 15 typ. gate charge 16 gate charge waveforms v gs = f( q gate ); i d = 100 a pulsed parameter: v dd v gs q gate v g s(th) q g (th) q g s q g d q sw q g 35 37 39 41 43 45 -60 -20 20 60 100 140 180 t j [c] v b r ( d s s ) [ v ] 8 v 32 v 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 q gate [nc] v g s [ v ] 100 a 50 a 25 a 0 100 200 300 400 500 600 25 75 125 175 t j [c] e a s [ m j ] rev. 1.0 page 7 2012-07-02
ipb100n04s4-h2 ipi100n04s4-h2, ipp100n04s4-h2 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2010 all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.0 page 8 2012-07-02
ipb100n04s4-h2 ipi100n04s4-h2, ipp100n04s4-h2 revision history version revision 1.0 changes final data sheet date 4/13/2010 rev. 1.0 page 9 2012-07-02
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